METHOD OF PROCESSING RESIDUE OF ION IMPLANTED PHOTORESIST, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

摘要

In order to carry out ashing at a high efficiency without leaving any residue and also to inhibit corrosion of an underlying material of a resist and further to prevent particle contamination, a photoresist is ashed at a low temperature to be removed and a residue of the photoresist is removed at a high temperature.