MULTILAYER INTERCONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PURPOSE: A multilayer interconnection structure of a semiconductor device is provided to relax thermal stress concentrating on a via contact in an alloy process and improve the reliability of contact interconnection by introducing a P-poly pattern in a multilayer interconnection formation. CONSTITUTION: A P-poly pattern(102) is formed on the insulation substrate(100). The first interlayer dielectric(104) comprising the first via hole(h1) is formed on the resultant structure in order to expose partially the surface of the P-poly pattern. The first/second metal interconnections(106,108) comprising a through hole(t) are formed on the first interlayer dielectric to connect the first via hole(h1,h2). A conductive plug(110) is formed to meet the P-poly pattern. A passivation layer(112) having HDP oxide/nitride stack structure is formed on the second insulation layer(108) including the conductive plug(110).