| 摘要 |
A metal silicide (e.g., WSix) layer an integrated circuit is etched in a Cl2/O2 environment having an O2 concentration of greater than or equal to 25% by volume. This environment may be provided at a pressure of-approximately 2-40 mili-Torr, in a reactor with a source power of approximately 200-2000 Watts and a bias power of approximately 30-400 Watts for approximately 30 seconds. In one particular example, the Cl2/O2 environment includes approximately 45 sccm Cl2 and 30 sccm O2. The metal silicide layer is fully etched without etching an underlying poly-silicon layer. The metal silicide layer may be a portion of a gate structure.
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