发明名称 Semiconductor device having a ball grid array and a fabrication process thereof
摘要 A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.
申请公布号 US2002089054(A1) 申请公布日期 2002.07.11
申请号 US20020097817 申请日期 2002.03.15
申请人 FUJITSU LIMITED 发明人 FUKASAWA NORIO;MATSUKI HIROHISA;NAGASHIGE KENICHI;HAMANAKA YUZO;MORIOKA MUNEHARU
分类号 H01L23/28;H01L21/02;H01L21/301;H01L21/56;H01L21/60;H01L21/673;H01L23/00;H01L23/12;H01L23/31;H01L29/06;(IPC1-7):H01L23/48 主分类号 H01L23/28
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