| 发明名称 |
N-CHANNEL METAL OXIDE SEMICONDUCTOR (NMOS) DRIVER CIRCUIT AND METHOD OF MAKING SAME |
| 摘要 |
An N-channel metal oxide semiconductor (NMOS) driver circuit (and method for making the same), includes a boost gate stack formed on a substrate and having a source and drain formed by a low concentration N-type implantation, and an N-driver coupled to the boost gate stack.
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| 申请公布号 |
US2002089020(A1) |
申请公布日期 |
2002.07.11 |
| 申请号 |
US20000488515 |
申请日期 |
2000.01.21 |
| 申请人 |
CLEVENGER LAWRENCE A.;DIVAKARUMI RAMA;HSU LOUIS LU-CHEN;LI YUJUN |
发明人 |
CLEVENGER LAWRENCE A.;DIVAKARUMI RAMA;HSU LOUIS LU-CHEN;LI YUJUN |
| 分类号 |
H01L23/522;H01L21/225;H01L21/336;H01L21/768;H01L21/8234;H01L21/8242;H01L27/088;H01L27/108;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L23/522 |
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