Ground-plane device with back oxide topography

摘要

A ground-plane SOI device including at least a gate region that is formed on a top Si-containing layer of a SOI wafer, said top Si-containing layer being formed on a non-planar buried oxide layer, wherein said non-planar buried oxide layer has a thickness beneath the gate region that is thinner than corresponding oxide layers that are formed in regions not beneath said gate region as well as a method of fabricating the same are provided.