| 摘要 |
<p>A method for manufacturing a semiconductor device including a transistor and capacitors formed over a silicon substrate, wherein hydrogen present at least on a part of the surface of the silicon substrate, hydrogen is removed by exposing the surface to a plasma produced from a first inert gas, a plasma is produced from a mixture gas of a second inert gas and one or more kinds of gas molecules, and thereby to form a silicon compound layer containing at least part of the elements constituting the gas molecules is formed on the surface of the silicon substrate.</p> |
