| 摘要 |
The present invention provides a method of forming a substrate contact electrode in a silicon-on-insulator (SOI) wafer. The SOI wafer has a substrate, with a first insulator layer and a silicon layer covering the substrate, respectively. The method begins with the etching of a contact hole from the surface of the silicon layer through to the substrate and forming a second insulator layer covering the interior wall and the bottom surface within the contact hole. After removing portions of the second insulator layer from the bottom surface within the contact hole, a substrate contact plug is formed in the contact hole. Finally, a first ion implantation process is performed to form a well in the SOI wafer.
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