| 摘要 |
Disclosed is an improved tetraethylorthosilicate (TEOS) deposition apparatus for semiconductor manufacture processes, in which the apparatus comprises a furnace chamber for performing TEOS deposition and an exhaust pipe line connected with the furnace chamber for discharging a gas from the furnace chamber, and the exhaust pipe line is connected with a main valve, an automatic pressure control (APC) valve and a pump in sequence. The improvement is characterized in that the exhaust pipe line further connects a disc trap between the main valve and APC valve for filtering the gas in the exhaust pipe line. With the insertion of the disc trap in the exhaust pipe line to collect and filter TEOS deposition from the gas in the exhaust pipe line, failure and wearing of the APC valve caused by TEOS due to temperature variations are prevented, thereby increasing the lifetime of the APC valve and reducing the failure possibility.
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