发明名称 Polymer, resist composition and patterning process
摘要 The invention provides a polymer comprising recurring units containing bridged aliphatic rings in the backbone and having a hydroxyl, acyloxy or alkoxylcarbonyloxy group as well as a lactone structure bonded through a spacer, the polymer having a weight average molecular weight of 1,000-500,000. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.
申请公布号 US2002091215(A1) 申请公布日期 2002.07.11
申请号 US20010986274 申请日期 2001.11.08
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 TACHIBANA SEIICHIRO;NAKASHIMA MUTSUO;NISHI TSUNEHIRO;KINSHO TAKESHI;HASEGAWA KOJI;WATANABE TAKERU;HATAKEYAMA JUN
分类号 G03F7/004;C08F222/06;C08F232/08;G03F7/039;(IPC1-7):C08F24/00 主分类号 G03F7/004
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