| 摘要 |
<p>A method and an apparatus for growing a single crystal by the Czochralski method, characterized in that a cooling cylinder made of copper or a metal having a heat conductivity of greater than that of copper is disposed in a manner such that a single crystal under being pulled up is surrounded by the cylinder and a cooling medium is streamed through the cooling cylinder, to thereby grow a single crystal while cooling forcedly the vicinity of the interface of crystal growth. The method allows the maximization of the effect of cooling a growing single crystal even in the case of growing a silicon single crystal having a diameter of 300 mm or more, which leads to the achievement of an enhanced speed for the crystal growth.</p> |
