| 摘要 |
The present invention provides a method to form a dual damascene opening by a liquid phase deposition method. The method can avoid the photoresist left in the via hole and the etching profile of the trench distorted, such will affect the formation of dual damascene opening. The liquid phase deposition is a selectively depositing method, so silicon dioxide will be deposited on the dielectric layer but not on the photoresist. The liquid phase deposition is performed at a temperature range from about 25° C. to about 40° C., which is different from those prior deposition methods which are carried out at a temperature about several hundred degrees centigrade. The liquid used in the liquid phase deposition method was prepared by dissolving highly purified silica particles in hydrofluosilicic acid at 35° C.
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