发明名称 Power polarity reversal protecting circuit for an integrated circuit
摘要 A power polarity reversal protecting circuit for an integrated circuit includes a protecting transistor, PMOS components and NMOS components, wherein the protecting transistor is a protecting PMOS transistor or a protecting NMOS transistor. If the protections transistor is the PMOS transistor, a gate and a source of the protecting PMOS transistor are respectively connected to ground and power. A drain and a substrate of the protecting PMOS transistor is connected to a substrate of the PMOS component. If the protecting transistor is the protecting NMOS transistor, a gate and a source of the protecting NMOS transistor are respectively connected to power and ground. A drain and a substrate of the protecting NMOS transistor is connected to a substrate of the NMOS component. When the power polarity is in reversal connection, the protecting transistors are terminated to prevent damage from the power polarity reversal connection.
申请公布号 US2002089803(A1) 申请公布日期 2002.07.11
申请号 US20010754304 申请日期 2001.01.05
申请人 CHIN HSU-YUAN;LIN WEN-CHI 发明人 CHIN HSU-YUAN;LIN WEN-CHI
分类号 H01L27/02;H02H11/00;(IPC1-7):H02H3/18 主分类号 H01L27/02
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