发明名称 |
Method for forming micro-pattern of semiconductor device |
摘要 |
A method for forming a micro-pattern of a semiconductor substrate, and more particularly, to a method for preventing defects in a photoresist pattern, such as undercut or footing, due to inter-mixing between an organic anti-reflective coating and a photoresist by forming a carbonized layer on the surface of the organic anti-reflective coating by a curing process like ion implantation or E-beam curing.
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申请公布号 |
US2002090832(A1) |
申请公布日期 |
2002.07.11 |
申请号 |
US20010888661 |
申请日期 |
2001.06.25 |
申请人 |
KOH CHA-WON;HONG SUNG-EUN;JUNG MIN-HO;KIM JIN-SOO;LEE GEUN-SU;JUNG JAE-CHANG |
发明人 |
KOH CHA-WON;HONG SUNG-EUN;JUNG MIN-HO;KIM JIN-SOO;LEE GEUN-SU;JUNG JAE-CHANG |
分类号 |
G03F7/09;G03F7/11;H01L21/027;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
G03F7/09 |
代理机构 |
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