发明名称 Method for forming micro-pattern of semiconductor device
摘要 A method for forming a micro-pattern of a semiconductor substrate, and more particularly, to a method for preventing defects in a photoresist pattern, such as undercut or footing, due to inter-mixing between an organic anti-reflective coating and a photoresist by forming a carbonized layer on the surface of the organic anti-reflective coating by a curing process like ion implantation or E-beam curing.
申请公布号 US2002090832(A1) 申请公布日期 2002.07.11
申请号 US20010888661 申请日期 2001.06.25
申请人 KOH CHA-WON;HONG SUNG-EUN;JUNG MIN-HO;KIM JIN-SOO;LEE GEUN-SU;JUNG JAE-CHANG 发明人 KOH CHA-WON;HONG SUNG-EUN;JUNG MIN-HO;KIM JIN-SOO;LEE GEUN-SU;JUNG JAE-CHANG
分类号 G03F7/09;G03F7/11;H01L21/027;(IPC1-7):H01L21/31;H01L21/469 主分类号 G03F7/09
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