| 摘要 |
<p>A method for increasing information capacity in nominally m-bit-percell Flash technology, using advanced coding techniques and changes in the Flash array interface, without increasing the basic cell size or the bit read failure rate. The increase in information capacity is obtained by using a number n, greater than 1, of memory cells, each cell having a respective adjustable parameter, setting the parameters to collectively represent a binary number of b bits, b being greater than nm, measuring the parameters and decoding the measured parameters collectively to recover the number.</p> |
