发明名称 Method for writing an item of data into a memory cell in a memory cell section uses addressable column and line wires, amplifying circuits linked to the column wires and a loading alignment device to align loading on the column wires.
摘要 An integrated memory has a memory cell section and addressable column (2) and line (1) wires. A loading alignment device (7) aligns loading on the column wires, to which an amplifying circuit (6) connects. A controller (8) triggers the loading alignment device after causing an addressed column line to write to a memory cell, so that loading alignment is performed on an addressed column wire. The controller links to amplifying circuits to switch them on and off. An Independent claim is also included for an integrated memory with a memory cell section, addressable column wires and addressable line wires.
申请公布号 DE10062110(A1) 申请公布日期 2002.07.11
申请号 DE20001062110 申请日期 2000.12.13
申请人 INFINEON TECHNOLOGIES AG 发明人 HOTTGENROTH, DIRK
分类号 G11C7/12;G11C11/4076;G11C11/4094;(IPC1-7):G11C11/407 主分类号 G11C7/12
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