| 摘要 |
PURPOSE: A method for fabricating a complementary metal oxide semiconductor(MOS) image sensor is provided to decrease spin on glass(SOG) defects, by making hydrophilic SOG intercept a contact with a color filter array(CFA), a micro lens or deionized water of an assembly process. CONSTITUTION: A metal interconnection is additionally patterned on an interface between a product die and a scribe line so that a high topology is formed in the region where the metal interconnection is additionally patterned. An SOG layer(205) is not exposed when an etch process is performed regarding the interface between the product die and the scribe line.
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