发明名称 |
SELF-ALIGNED COLLAR AND STRAP FORMATION FOR SEMICONDUCTOR DEVICES |
摘要 |
A method for fabricating a buried strap forms a dielectric collar along sidewalls of a trench. The trench is formed in a substrate. The trench is filled with a conductive material and the conductive material is recessed in the trench to expose a portion of the collar. A masking layer is deposited in the trench over the exposed portion of the collar. A portion of the masking layer is removed over one side of the collar and a portion of the collar is etched on the one side. A buried strap is formed on the conductive material, which connects to the substrate on the one side.
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申请公布号 |
US2002090824(A1) |
申请公布日期 |
2002.07.11 |
申请号 |
US20010756415 |
申请日期 |
2001.01.08 |
申请人 |
JAIPRAKASH V.C.;ARNOLD NORBERT |
发明人 |
JAIPRAKASH V.C.;ARNOLD NORBERT |
分类号 |
H01L21/8242;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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