发明名称 |
Removal of impurities and improvement of minority carriers life-time in silicon |
摘要 |
<p>A method of increasing the minority carrier recombination lifetime in a silicon body contaminated with transition metals, in particular iron. The silicon body is stored at a temperature and for a time which are adequate to bring about a diffusion of the metal out of the interior of the silicon body to its surface and increase the minority carrier recombination lifetime measurably.</p> |
申请公布号 |
EP0590508(B1) |
申请公布日期 |
2002.07.10 |
申请号 |
EP19930115307 |
申请日期 |
1993.09.23 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER, ROBERT |
分类号 |
H01L21/322;H01L21/324;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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