METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to guarantee a characteristic of a static random access memory(SRAM), by forming a cell in a well and by including a transistor connecting the well and the cell by a p-well pickup line and a vertical thyristor. CONSTITUTION: A p-well(31) is formed in a unit cell region of a semiconductor substrate. An access n-channel metal oxide semiconductor(NMOS) transistor is formed in the p-well and a p-well pickup is formed. An interlayer dielectric is formed which has an n-type impurity junction region at one side of the access NMOS transistor and a thyristor contact hole exposing the p-well. A p-well pickup contact hole(45) exposing the p-well pickup is formed. Silicon in the lower portion of the contact hole is epitaxially grown to form a p-type silicon layer. A thyristor pillar(47) is formed by an n-type and p-type impurity ion implantation process. A thyristor and the p-well pickup line(51) are formed by the first metal interconnection connected to the thyristor pillar and the p-well pickup. A bitline(57) connected to the n-type impurity junction region at the other side of the access NMOS transistor is formed.