| 摘要 |
PURPOSE: A method of forming a photoresist pattern of a semiconductor device is provided to improve resolution by the double developing method that patterns a photoresist pattern twice by using polar and non polar solvent. CONSTITUTION: A photoresist layer is formed to pattern elements for forming a semiconductor device. An exposure process is performed to define an ionized region, a non-ionized region and a region to be pattern by controlling exposure energy. The ionized region and the non-ionized region are removed by an ionization solvent and non-ionization solvent respectively.
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