METHOD FOR FABRICATING TRIPLE WELL OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a triple well of a semiconductor device is provided to improve a characteristic of a well and an electrical characteristic of the semiconductor device, by using a nitrogen layer so that respective wells are isolated. CONSTITUTION: The first ion implantation process is performed regarding a semiconductor substrate(11) having a field oxide layer(12) to form the first well in the entire region including a lower region of the field oxide layer. The first heat treatment is performed. The second ion implantation process is performed to form an insulation layer separated by the field oxide layer in the first well. The first photoresist layer pattern is formed to expose the first region. The third ion implantation process is performed to form the second well in the insulation layer of the first region. The first photoresist layer pattern is eliminated. The second photoresist layer pattern is formed to expose the second region. The fourth impurity ion implantation process is performed regarding the second region to form the third well in the insulation layer of the second region. After the second photoresist layer pattern is removed, the second heat treatment process is performed.