发明名称 BURNING METHOD FOR SILICON CARBIDE COMPACT
摘要 PROBLEM TO BE SOLVED: To provide a silicon carbide compact burning method by which porous silicon carbide members can be manufactured at small variation of their mean pore diameters and in almost uniform flexural strengths because the silicon carbide compact can be heated at an almost uniform temperature. SOLUTION: The burning method for silicon carbide compact is to burn the silicon carbide compacts by putting them on burning tools after degreasing the columnar silicon carbide compacts including silicon carbide powder, a binder and a dispersion medium liquid. The burning method for the silicon carbide compact has features that a stacked body is formed by stacking the burning tools with the degreased silicon carbide compacts put on them in a plurality of steps, that spaces between the silicon carbide compacts and the upper and lower burning tools are settled, and that the stacked body is heated from the upper and lower parts of it.
申请公布号 JP2002193670(A) 申请公布日期 2002.07.10
申请号 JP20000390636 申请日期 2000.12.22
申请人 IBIDEN CO LTD 发明人 SAIJO TAKAMITSU;KASAI KENICHIRO
分类号 B01D39/00;B01D39/20;C04B35/565 主分类号 B01D39/00
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