发明名称 MAGNETRON SPUTTERING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide magnetron sputtering equipment which makes use of a superior characteristic of a substrate rotation and revolution type, and effectively prevents flow of electrons into a substrate, while maintaining uniformity of thin film and high productivity, to form a film at low temperature. SOLUTION: This magnetron sputtering equipment is characterized by having a magnetron cathode provided with a target, and several substrate holders arranged so as to face the target and rotate and revolute, providing an electroconductive member on the tip of the revolution shaft, along with installing a revolution shaft so as to be coaxial with the central axis of the target and arranging the several substrate holders around the revolution shaft, and grounding the electroconductive member or imposing an electropositive potential on it, in sputtering equipment which forms a thin film while making substrates mounted on the substrate electrode holders rotate and revolute. Thus, the equipment enables film to be formed at lower temperature by employing a magnetic material for the electroconductive member.
申请公布号 JP2002194542(A) 申请公布日期 2002.07.10
申请号 JP20000396461 申请日期 2000.12.27
申请人 ANELVA CORP 发明人 SHIMOKAWA HIDETOSHI;HIRATA KAZUO;MATSUDA TOMOKO;OTA TOSHIYUKI;KOBAYASHI YUKIHIRO
分类号 C23C14/35;H01L21/203;(IPC1-7):C23C14/35 主分类号 C23C14/35
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