发明名称 SPUTTERING TARGET WITH LOW OXYGEN CONTENT
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target with low oxygen content, which prevents a characteristics deterioration of the formed film resulting from inevitably existing oxygen in an alloy material as contaminant. SOLUTION: The sputtering target with low oxygen content is characterized by adding carbon as oxygen scavenger to metal components composing a Cr alloyed sputtering target.
申请公布号 JP2002194536(A) 申请公布日期 2002.07.10
申请号 JP20000396942 申请日期 2000.12.27
申请人 MITSUI MINING & SMELTING CO LTD 发明人 ONO NAOKI
分类号 C23C14/34;C22C27/06;H01L21/203;(IPC1-7):C23C14/34 主分类号 C23C14/34
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