发明名称 |
SPUTTERING TARGET WITH LOW OXYGEN CONTENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target with low oxygen content, which prevents a characteristics deterioration of the formed film resulting from inevitably existing oxygen in an alloy material as contaminant. SOLUTION: The sputtering target with low oxygen content is characterized by adding carbon as oxygen scavenger to metal components composing a Cr alloyed sputtering target.
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申请公布号 |
JP2002194536(A) |
申请公布日期 |
2002.07.10 |
申请号 |
JP20000396942 |
申请日期 |
2000.12.27 |
申请人 |
MITSUI MINING & SMELTING CO LTD |
发明人 |
ONO NAOKI |
分类号 |
C23C14/34;C22C27/06;H01L21/203;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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