| 摘要 |
PURPOSE: A method of fabricating a thin film transistor liquid crystal display is provided to reduce the number of mask processes so as to decrease TFT-LCD manufacturing cost. CONSTITUTION: A metal film is deposited on a transparent insulating substrate(11) and patterned through the first mask process, to form a gate electrode(13). An active layer(15) and a metal layer(17) used for forming source and drain electrodes are sequentially formed on the transparent insulating substrate and patterned through the second mask process, to form the source and drain electrodes(17a,17b), simultaneously. The active layer is selectively removed using the source and drain electrodes as a mask. A passivation layer having an alignment function is formed on the overall surface of the substrate.
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