ELECTROSTATIC DISCHARGE PROTECTION DEVICE

摘要

PURPOSE: An electrostatic discharge(ESD) protection device is provided to improve a characteristic of an ESD input circuit, by forming a poly gate of a field transistor structure so that the threshold voltage of a field transistor is reduced to decrease the breakdown voltage of a drain junction part and a snap-back voltage. CONSTITUTION: The first and second field oxide layers(12A,12B) are formed in a semiconductor substrate having a P-well region(11). The first source junction part(13A) and the first drain junction part(14A) are formed in the P-well region at both sides of the first field oxide layer. The second source junction part(13B) and the second drain junction part(14B) are formed in the P-well region at both sides of the second field oxide layer. The first pickup region(15A) is formed in the P-well region adjacent to the first source junction part. The second pickup region(15B) is formed in the P-well region adjacent to the second source junction part. The first gate(16A) is formed on the first field oxide layer and the second gate(16B) is formed on the second field oxide layer.