METHOD FOR FABRICATING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact plug of a semiconductor device is provided to prevent an abnormal growth of a selective epitaxial growth(SEG) contact plug, by performing a HCl cleaning process between a H2 bake process and an SEG growth process. CONSTITUTION: A semiconductor substrate(11) is prepared in which a contact hole(14) is formed in an interlayer dielectric. The first cleaning process is performed in which H2SO4 and HF are used as a base. The second cleaning process is performed by a H2 bake method. The third cleaning process is performed in a HCl gas atmosphere. A contact plug(16) is formed in the contact hole by an SEG growth process.