| 发明名称 |
Improved flourine doped sio2 film |
| 摘要 |
The present invention is a dielectric film and its method of fabrication. The dielectric film of the present invention includes silicon oxygen fluorine and nitrogen wherein the interlayer dielectric comprises between 0.01-0.1 atomic percent nitrogen. |
| 申请公布号 |
GB0212404(D0) |
申请公布日期 |
2002.07.10 |
| 申请号 |
GB20020012404 |
申请日期 |
2000.10.11 |
| 申请人 |
INTEL CORPORATION |
发明人 |
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| 分类号 |
C23C16/30;H01L21/316;H01L23/532 |
主分类号 |
C23C16/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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