| 摘要 |
PROBLEM TO BE SOLVED: To achieve a method for measuring a property of heat dissipation which directly detects the property of the heat dissipation, and does not overlook abnormality of not ensuring required dissipating ability when there is a manufacturing error on a heat dissipating fin, etc., and an abnormality of not propagating heat from a power transistor to a heat sink when there is a contacting defect between the power transistor and the heat sink. SOLUTION: A space contacting a heat dissipating part is insulated from the external. The insulated space is filled with gas. A semiconductor module is turned on. The property of the heat dissipation of the semiconductor module is measured by measuring a variation of pressure and/or volume of the sealed gas before and after the semiconductor module is turned on. Since an index for indicating a rising range of temperature of the gas which directly indicates the property of the heat dissipation is measured, abnormalities are not overlooked.
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