| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable compound with a vapor pressure an order higher than that of Ta(NtBu)(NEt2)3 as a raw material for forming TaN thin film as a barrier film by CVD, and a method for forming the TaN film therewith. SOLUTION: Novel tertiary amylimidetris(dimethylamide)tantalum, Ta(NtAm)(NMe2)3, has its vapor pressure of 1 Torr/80 deg.C and melting point of 36 deg.C. This compound is obtained by reacting 1 mol of TaCl5, 4 mol of LiNMe2, and 1 mol of LiNHtAm in an organic solvent at around room temperature, being separated by filtration, distilling away the solvent, and being vacuum distilled. A cubic TaN film can be formed on a SiO2/Si substrate by CVD of 0.05 Torr, 550 deg.C with this compound as a raw material.
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