| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: A method of manufacturing semiconductor devices is provided to improve the cell efficiency for integration and to form the structure of cells as a cross shape. CONSTITUTION: A cross type active region is formed on a semiconductor substrate. A wall region is formed by an ion implantation. A gate oxide layer is formed on the active region. A first and second wordlines(15,16) are formed on the resultant layer. An interlayer insulation is formed to cover the first and second word lines and then a bitline(17) is formed on it.
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| 申请公布号 |
KR20020056195(A) |
申请公布日期 |
2002.07.10 |
| 申请号 |
KR20000085508 |
申请日期 |
2000.12.29 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HAN, CHANG HUI;JUN, YUN SEOK;PARK, MIN SU |
| 分类号 |
H01L21/82;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
| 代理机构 |
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