| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a polishing pad excellent in non- scratching, polishing and flattening properties by suppressing the formation of voids, in view of such a problem that, when conventionally a urethane-based polishing pad is produced by mixing and curing an isocyanate-terminated prepolymer, a fine particle and an active-hydrogen compound, voids are formed with gas such as air, contained in each of the materials and that included into the mixture by the mixing, and the voids uneven in sizes and distribution appear onto the surface of the polishing pad obtained by slicing a cured block obtained from the above materials, involving a problem of marking scratches onto the surfaces of the materials to be polished such as a silicon wafer, when these are polished. SOLUTION: In the method for producing the polyurethane polishing pad for polishing a semiconductor by mixing, blending and curing the isocyanate-terminated prepolymer, the fine particle and the active-hydrogen compound, formation of the voids can be suppressed by using the fine particle which is wetted with a low-viscosity liquid, and eliminating gas existing in each process by degassing under reduced pressure by compressing a defoaming process by reducing pressure before mixing the isocyanate- terminated prepolymer and the active-hydrogen compound. |
