METHOD FOR FABRICATING INSULATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an insulation layer of a semiconductor device is provided to improve a gap-fill capacity and to prevent a void, by simultaneously performing an etch process and a deposition process while using high density plasma(HDP) equipment. CONSTITUTION: A plurality of metal interconnections(22) having regular intervals are formed on an insulated substrate(21). A diffusion barrier layer(23) is formed on the insulated substrate including the metal interconnection. An etch process and a deposition process are simultaneously performed regarding the entire surface of the insulated substrate including the diffusion barrier layer to deposit a boron phosphorous silicate glass(BPSG) layer(24) by using the HDP equipment. The BPSG layer is flowed at a temperature not higher than 900 deg.C.