发明名称 METHOD AND APPARATUS FOR VACUUM DEPOSITION
摘要 PROBLEM TO BE SOLVED: To realize continuous film formation over a long time in a saved space using a cheap raw material. SOLUTION: This vacuum deposition method for forming film on a substrate by melting and vaporizing a raw material accommodated in a crucible 5 with a heating means, in a vacuum chamber, comprises carrying out alternately the following steps: a step of sequentially pushing circumferentially arranged several bar type of raw materials 21, and a step of rotating these several bar type of raw material 21 in a circumferential direction, to heat and melt the pushed bar type of raw material 21 and supply it to a crucible 5.
申请公布号 JP2002194532(A) 申请公布日期 2002.07.10
申请号 JP20000391188 申请日期 2000.12.22
申请人 SONY CORP 发明人 SUZUKI TOSHIAKI
分类号 C23C14/24;C23C14/30;G11B5/85;(IPC1-7):C23C14/24 主分类号 C23C14/24
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