| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to improve step coverage of the metal interconnection by forming a spacer made of a dual cap insulation layer. CONSTITUTION: The first insulation layer and the first conductive layer are sequentially formed on a substrate(21) having a topology composed of a predetermined pattern. The second insulation layer and the third insulation layer are sequentially formed on the first conductive layer. The third insulation layer, the second insulation layer and the first conductive layer are sequentially etched by using a mask for patterning the first conductive layer. The fourth insulation layer is formed on the resultant structure. The fourth insulation layer is anisotropically blanket-etched until the third insulation layer is eliminated so that the fourth insulation layer spacer is formed on the sidewall of the patterned second insulation layer and the first conductive layer pattern(23) while a predetermined thickness of the first insulation layer is etched. The fifth insulation layer for planarization is formed on the resultant structure. The planarization insulation layer and the first insulation layer in a metal contact hole formation region are etched. A metal layer is formed.
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