发明名称 |
STRONGLY TEXTURED ATOMIC RIDGES AND DOTS |
摘要 |
The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate. |
申请公布号 |
EP1221179(A1) |
申请公布日期 |
2002.07.10 |
申请号 |
EP20000966708 |
申请日期 |
2000.09.08 |
申请人 |
STARMEGA CORPORATION |
发明人 |
KENDALL, DON;GUTTAG, MARK |
分类号 |
H01L21/335;B81B3/00;G01N27/414;G01Q70/06;G01Q70/08;H01L27/14;H01L29/06;H01L49/00;(IPC1-7):H01L27/14 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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