METHOD FOR ETCHING GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for etching a gate of a semiconductor device is provided to improve an electrical characteristic, by preventing a blowing-up phenomenon in a tungsten silicide layer while using a new etch condition. CONSTITUTION: A semiconductor substrate in which a polysilicon layer, the tungsten silicide layer and an anti-reflective coating(ARC) are sequentially formed is installed in an etch chamber to perform a gate etch process. The ARC is etched and patterned by using CF4 and Ar gas as etch gas. The tungsten silicide layer is etched and patterned by using Cl2 gas and O2 gas as etch gas. The polysilicon layer is etched and patterned by using Cl2 gas and N2 gas as etch gas.