| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a phase shift mask and a phase shift mask blank, having superior light transmission properties over a wide wavelength region and superior controllability for phase difference. SOLUTION: The phase shift mask blank 10 is obtained by forming a shifter layer 2 of 1,069Åfilm thickness, consisting of a ZrSiO film and having 1.781 for refractive index n and 0.0148 extinction coefficient k at 193 nm wavelength of the exposure light through reactive sputtering, which uses argon and oxygen on a transparent substrate 1 consisting of a synthetic quartz substrate and by depositing a light-shielding layer 3 consisting of a chromium film with 1,000Åfilm thickness. Further, the light-shielding layer 3 is patterned to form a light-shielding pattern 3a, and the shifter layer 2 is subjected to dry etching with chlorine, using ICP(inductively coupled plasma) type dry etching apparatus, to form a phase shift pattern 2a for obtaining shift mask 100 of the invention.</p> |
