ELECTRODE STRUCTURE OF SCHOTTKY BARRIER DIODE

摘要

PROBLEM TO BE SOLVED: To provide an electrode structure of a Schottky barrier diode which can minimize a stress caused by a solder in order to eliminate an undesirable influence upon the reverse direction characteristic of the Schottky barrier diode when a semiconductor chip is bonded to an anode-side electrode of a lead frame. SOLUTION: This electrode structure of a Schottky barrier diode is composed of a bonded metal electrode consisting of a metal which is easy to fit for a solder, an intermediate metal electrode, and a Schottky metal electrode consisting of a metal which is hard to fit for a solder. The sizes of the bonded metal electrode and the intermediate metal electrode are determined to be smaller than the Schottky metal electrode. Furthermore, being the same size as the Schottky metal electrode, an overhang part out of a diffusion region of a guard ring is at least 30μm.