| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to sufficiently guarantee an interval margin and to enable high integration of the semiconductor device, by patterning a pad and an interconnection in two different layers. CONSTITUTION: A trench for the second metal pad(27) is formed on an interlayer dielectric having the first metal interconnection(13). The interlayer dielectric is etched to form a via contact hole exposing the first metal interconnection. A metal layer filling the via contact hole is formed on the resultant structure. The metal layer is etched back by a photolithography process using the second metal interconnection mask so that the second metal pad and the second metal interconnection(29) filling the via contact hole and the trench are formed in different layers.
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