| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to simplify a fabricating process and to guarantee a broader active region in forming a landing pad contact, by oxidizing a barrier layer so that the landing pad contact is formed through an etch process. CONSTITUTION: Word lines are formed on a semiconductor substrate. A nitride material is deposited on the entire surface including the word lines and the barrier layer is formed. An interlayer dielectric is formed on the barrier layer. The interlayer dielectric is reflowed by a heat treatment process while the barrier layer is oxidized to have the same etch selectivity as the interlayer dielectric. A high temperature low pressure deposition(HLD) layer(30) is deposited on the interlayer dielectric and a photoresist layer pattern(31) is formed on the HLD layer. The interlayer dielectric between the word lines, the barrier layer and a part of a sidewall are etched to form the landing pad contact(32) by using the photoresist layer pattern as a mask.
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