TEST PATTERN OF FLASH MEMORY DEVICE AND TEST METHOD

摘要

PURPOSE: A test pattern is provided to exactly decide whether a tungsten interconnection is contacted to a source region or not by improving a structure. CONSTITUTION: A test pattern comprises isolation layers(21) formed on defined regions of a semiconductor substrate, word lines(22) having different length portions vertically formed to the isolation layers(21), polysilicon interconnections connected with the long portions of the word lines(22), a doped ion implantation region(23) formed on the entire surface of the semiconductor substrate, tungsten interconnections(24) formed between the long and short portions of the word lines(22) and formed on active regions between word lines(22), contact holes(25) exposing the tungsten interconnections(24), and metal interconnections(26) formed between word lines(22) for filling the contact holes(25).