| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to prevent a defect and improve an electrical characteristic, by eliminating a seam formed by a void so that residue is not generated. CONSTITUTION: A pad oxide layer and a pad nitride layer are sequentially formed on a semiconductor substrate(11). A predetermined region of the pad nitride layer and the pad oxide layer is etched. A target depth of the semiconductor substrate is etched to form a trench. The first insulation material layer(14) is deposited on the resultant structure including the trench and is etched back to leave a part of the first insulation material layer only in the lower portion of the trench. The second insulation material layer(16) is deposited on the resultant structure including trench to completely fill the trench. A chemical mechanical polishing(CMP) process is performed to remove the second insulation material layer, the pad nitride layer and the pad oxide layer so that the isolation layer(46) composed of the first and second insulation material layers is formed.
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