| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a flat CVD copper thin-film on a PVD copper film or a dissimilar metal film, with satisfactory reproducibility in a high growth rate. SOLUTION: This chemical vapor deposition method for growing a copper thin film on a substrate comprises supplying gas of a compound on the substrate, which has aβ-diketone group, includes only oxygen atoms as a heterologous atom, is an aliphatic ketone compound such as 2,4-pentanedione, and is preferably liquid at room temperature. It also comprises supplying gas of an aliphatic ketone compound before growing the copper thin film, during growing it, or after growing a part.
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