METHOD FOR FABRICATING X-RAY DETECTING DEVICE

摘要

PURPOSE: A method for fabricating an X-ray detecting device is provided to make a transparent electrode easily come in contact with molybdenum, by forming a gate electrode material under a molybdenum layer in using molybdenum as an interconnection metal of a data line. CONSTITUTION: A sub electrode is formed on a substrate by using the same metal material as a gate electrode of a thin film transistor(TFT). An insulation material is formed on the substrate to cover the sub electrode and the gate electrode so that a gate insulation layer(82) is formed. The first contact hole is formed on the gate insulation layer to expose the sub electrode. A semiconductor layer is formed on the gate insulation layer. A source/drain electrode(64,66) of the TFT is formed on the semiconductor layer. A passivation layer(90) is formed on the resultant structure of the substrate to cover the TFT and the sub electrode. The second contact hole penetrates the passivation layer, one of the source or drain electrode and the semiconductor layer so that the sub electrode is exposed. A pixel electrode is so formed on the passivation layer to be connected to the sub electrode through the second contact hole.