METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve reliability, by controlling redeposition of Pt on the side surface of an oxide layer in forming a Pt storage electrode such that the Pt is an electrochemical deposition(ECD) seed metal under the oxide layer, and to guarantee sufficient capacitance by controlling generation of a fence. CONSTITUTION: A lower conductive element is formed. An etch barrier/adhesion layer is formed on the lower conductive element. An oxide layer for forming an electrode pattern is formed on the entire surface including the etch barrier/adhesion layer. The oxide layer is etched while etch selectivity of the lower conductive element and the etch barrier/adhesion layer is maintained at a ratio of 10:1. The oxide layer patterned by the etch process is cleaned.