METHOD FOR FABRICATING CONTACT HOLE OF THIN FILM TRANSISTOR

摘要

PURPOSE: A method for fabricating a contact hole of a thin film transistor(TFT) is provided to increase etch selectivity of a poly channel layer and an interlayer dielectric when a contact hole etch process is performed afterward, by implanting argon ions into the poly channel layer of the TFT so that the poly channel layer is transformed into an amorphous silicon layer. CONSTITUTION: The first interlayer dielectric(23) is formed on a substrate(21). The TFT having a gate electrode, a gate insulation layer and a channel layer is formed in a predetermined region of the first interlayer dielectric. The second interlayer dielectric(27) is formed on the TFT and the first interlayer dielectric. The second interlayer dielectric on the channel layer and the predetermined region of the substrate is firstly etched. Ions are implanted into the channel layer to transform the channel layer to an amorphous layer. The first and second interlayer dielectrics on the amorphous channel layer and the predetermined region of the substrate are etched to form contact holes in the gate insulation layer and the predetermined region of the substrate.