发明名称 METHOD FOR FABRICATING PHOTORESIST PATTERN
摘要 PURPOSE: A method for fabricating a photoresist pattern is provided to improve production yield by stably forming an ultra-fine pattern, and to reduce money needed to purchase equipment by improving resolution. CONSTITUTION: A photoresist layer is applied on a lower layer. An exposure process is performed regarding a predetermined portion of the photoresist layer. A photo base generated is added to the exposed photoresist layer so that a part of the acid generated by a photo acid generator existing in the photoresist layer is neutralized to a base. The photoresist layer is developed to form the photoresist pattern.
申请公布号 KR20020056476(A) 申请公布日期 2002.07.10
申请号 KR20000085837 申请日期 2000.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, JAE SEONG
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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