| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to prevent a characteristic of the isolation layer from being deteriorated by a void, by forming an oxide layer having no void in a trench having a decreased width. CONSTITUTION: A thermal oxide layer and a nitride layer are sequentially formed on a semiconductor substrate(1). A photoresist layer pattern for a trench mask is formed on the nitride layer. The nitride layer, the thermal oxide layer and the semiconductor substrate are selectively patterned to form the trench by using the photoresist layer pattern. The photoresist layer pattern is eliminated and a sidewall oxide layer is formed on the exposed surface of the trench. The sidewall oxide layer formed on the bottom of the trench is eliminated. A single silicon layer is formed on the bottom of the trench. The single silicon layer is oxidized through a heat treatment process. A high density plasma oxide layer is formed on the resultant structure including the oxidized single silicon layer and is planarized. The nitride layer and the thermal oxide layer are eliminated.
|
